RF BJT

BFP540FESDH6327XTSA1

Trans RF BJT NPN 4.5V 0.08A 250mW 4-Pin TSFP T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  Yes

• PPAP

  Unknown

• Type

  NPN

• Material

  Si

• Configuration

  Single Dual Emitter

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  10

• Maximum Collector-Emitter Voltage (V)

  4.5

• Maximum Collector-Emitter Voltage Range (V)

  <20

• Maximum Base-Emitter Voltage (V)

  1

• Maximum DC Collector Current (A)

  0.08

• Maximum DC Collector Current Range (A)

  0.06 to 0.12

• Maximum Emitter Cut-Off Current (nA)

  10000

• Maximum Collector Cut-Off Current (nA)

  100

• Operational Bias Conditions

  2V/20mA

• Minimum DC Current Gain

  50@20mA@3.5V

• Minimum DC Current Gain Range

  50 to 120

• Typical Input Capacitance (pF)

  0.55

• Typical Output Capacitance (pF)

  0.16

• Maximum Power Dissipation (mW)

  250

• Maximum Power 1dB Compression (dBm)

  11(Typ)

• Typical Power Gain (dB)

  20

• Typical 3rd Order Intercept Point (dBm)

  24.5

• Maximum Transition Frequency (MHz)

  30000(Typ)

• Maximum Noise Figure (dB)

  1.4(Min)

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.55

• Package Width

  0.8

• Package Length

  1.4

• PCB changed

  4

• Supplier Package

  TSFP

• Pin Count

  4

• Lead Shape

  Flat