Infineon Technologies AGBCV62BE6327HTSA1GP BJT
Trans GP BJT PNP 30V 0.1A 300mW 4-Pin SOT-143 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Base | |
| 2 | |
| 30 | |
| 30 | |
| 6 | |
| 150 | |
| 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 5000 | |
| 100@0.1mA@5V|220@2mA@5V | |
| 300 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-143 |
| 4 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP BCV62BE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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