MOSFETs

AUIRFB8405

Trans MOSFET N-CH Si 40V 185A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.95

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.9

• Maximum Continuous Drain Current (A)

  185

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  2.5@10V

• Typical Gate Charge @ Vgs (nC)

  107@10V

• Typical Gate Charge @ 10V (nC)

  107

• Typical Input Capacitance @ Vds (pF)

  5193@25V

• Maximum Power Dissipation (mW)

  163000

• Typical Fall Time (ns)

  77

• Typical Rise Time (ns)

  128

• Typical Turn-Off Delay Time (ns)

  55

• Typical Turn-On Delay Time (ns)

  14

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  2.1@10V

• Mounting

  Through Hole

• Package Height

  9.02(Max)

• Package Width

  4.83(Max)

• Package Length

  10.67(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole