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AOTF12N65|ALPHAO|simage
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MOSFETs

AOTF12N65

Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220F

Alpha and Omega Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    12
  • Maximum Drain-Source Resistance (mOhm)
    720@10V
  • Typical Gate Charge @ Vgs (nC)
    39.8@10V
  • Typical Gate Charge @ 10V (nC)
    39.8
  • Typical Input Capacitance @ Vds (pF)
    1792@25V
  • Maximum Power Dissipation (mW)
    50000
  • Typical Fall Time (ns)
    63
  • Typical Rise Time (ns)
    77
  • Typical Turn-Off Delay Time (ns)
    120
  • Typical Turn-On Delay Time (ns)
    36
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    570@10V
  • Mounting
    Through Hole
  • Package Height
    15.87
  • Package Width
    4.7
  • Package Length
    10.16
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220F
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources