IGBT Chip

AOTF10B65M1

Trans IGBT Chip N-CH 650V 20A 30W 3-Pin(3+Tab) TO-220F Tube

Alpha and Omega Semiconductor

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  EA

• Automotive

  Unknown

• PPAP

  Unknown

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±30

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.6

• Maximum Continuous DC Collector Current (A)

  20

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  30

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  15.87

• Package Width

  4.7

• Package Length

  10.16

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220F

• Pin Count

  3

• Lead Shape

  Through Hole