Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
EA
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
55
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
10.7@10V
Typical Gate Charge @ Vgs (nC)
20.6@10V|8.5@4.5V
Typical Gate Charge @ 10V (nC)
20.6
Typical Input Capacitance @ Vds (pF)
2007@30V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
3
Typical Rise Time (ns)
3.5
Typical Turn-Off Delay Time (ns)
27
Typical Turn-On Delay Time (ns)
8.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
8.7@10V|10.7@4.5V
Mounting
Through Hole
Package Height
9.14
Package Width
4.45
Package Length
10.03
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3