Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.3
Maximum Continuous Drain Current (A)
6
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
14@10V
Typical Gate Charge @ Vgs (nC)
4.3@4.5V|9@10V
Typical Gate Charge @ 10V (nC)
9
Typical Input Capacitance @ Vds (pF)
542@15V
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
3.5
Typical Rise Time (ns)
3.5
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
11.5@10V|16@4.5V
Mounting
Surface Mount
Package Height
0.85(Max) mm
Package Width
3 mm
Package Length
3 mm
PCB changed
8
Standard Package Name
DFN
Supplier Package
DFN EP
Pin Count
8
Lead Shape
No Lead