Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.2@Q1|1.9@Q2
Maximum Continuous Drain Current (A)
28@Q1|42@Q2
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
5@10V@Q1|2.5@10V@Q2
Typical Gate Charge @ Vgs (nC)
15.5@10V|6.8@4.5V@Q1|53@10V|25@4.5V@Q2
Typical Gate Charge @ 10V (nC)
15.5@Q1|53@Q2
Typical Input Capacitance @ Vds (pF)
1037@15V@Q1|3430@15@Q2
Maximum Power Dissipation (mW)
31000@Q1|78000@Q2
Typical Fall Time (ns)
4.3@Q 1|9.8@Q 2
Typical Rise Time (ns)
3.3@Q 1|5@Q 2
Typical Turn-Off Delay Time (ns)
18@Q 1|33.8@Q 2
Typical Turn-On Delay Time (ns)
5.5@Q 1|7.5@Q 2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
1.8@10V|2.4@4.5V|4.1@10V|6.7@4.5V
Mounting
Surface Mount
Package Height
0.95(Max)
Package Width
5.55
Package Length
5.2
PCB changed
8
Standard Package Name
DFN
Supplier Package
DFN-B EP
Pin Count
8