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MOSFETs

AON6576

Trans MOSFET N-CH 30V 26A 8-Pin DFN EP T/R

Alpha and Omega Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.2
  • Maximum Continuous Drain Current (A)
    26
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    4.7@10V
  • Typical Gate Charge @ Vgs (nC)
    8.8@4.5V|18.8@10V
  • Typical Gate Charge @ 10V (nC)
    18.8
  • Typical Input Capacitance @ Vds (pF)
    1320@15V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    4
  • Typical Rise Time (ns)
    3
  • Typical Turn-Off Delay Time (ns)
    21
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    3.9@10V|5.7@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.95(Max) mm
  • Package Width
    5.55 mm
  • Package Length
    5.2 mm
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    DFN EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources