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MOSFETs

AON2812

Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R

Alpha and Omega Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.4
  • Maximum Continuous Drain Current (A)
    4.5
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    37@10V
  • Typical Gate Charge @ Vgs (nC)
    2.2@4.5V|4.5@10V
  • Typical Gate Charge @ 10V (nC)
    4.5
  • Typical Input Capacitance @ Vds (pF)
    235@15V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    3
  • Typical Turn-Off Delay Time (ns)
    24
  • Typical Turn-On Delay Time (ns)
    3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    30@10V|35@4.5V|50@2.5V
  • Mounting
    Surface Mount
  • Package Height
    0.55(Max)
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    DFN
  • Supplier Package
    DFN-A EP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources