Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
12
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
44@10V
Typical Gate Charge @ Vgs (nC)
7.2@4.5V|16.2@10V
Typical Gate Charge @ 10V (nC)
16.2
Typical Gate to Drain Charge (nC)
3.5@10V
Typical Gate to Source Charge (nC)
3.8
Typical Reverse Recovery Charge (nC)
13.8
Typical Input Capacitance @ Vds (pF)
900@20V
Typical Reverse Transfer Capacitance @ Vds (pF)
68@20V
Minimum Gate Threshold Voltage (V)
1.7
Typical Output Capacitance (pF)
97
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
41.2
Typical Rise Time (ns)
8.4
Typical Turn-Off Delay Time (ns)
44.8
Typical Turn-On Delay Time (ns)
6.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
36@10V|52@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
30
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
50
Typical Diode Forward Voltage (V)
0.76
Typical Gate Plateau Voltage (V)
4.2
Typical Reverse Recovery Time (ns)
21.2
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
2
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.29
Package Width
6.1
Package Length
6.6
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Lead Shape
Gull-wing