Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.4
Maximum Continuous Drain Current (A)
140
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
2.2@10V
Typical Gate Charge @ Vgs (nC)
160@10V
Typical Gate Charge @ 10V (nC)
160
Typical Input Capacitance @ Vds (pF)
11135@40V
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
27
Typical Rise Time (ns)
23
Typical Turn-Off Delay Time (ns)
75
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Typical Drain-Source Resistance @ 25°C (mOhm)
1.8@10V|2.2@10V|2.2@6V|2.5@6V
Mounting
Surface Mount
Package Height
4.45 mm
Package Width
9.14 mm
Package Length
10.03 mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
3