Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Continuous Drain Current (A)
7.6
Maximum Drain-Source Resistance (mOhm)
23@10V
Typical Gate Charge @ Vgs (nC)
6@4.5V|12.5@10V
Typical Gate Charge @ 10V (nC)
12.5
Typical Input Capacitance @ Vds (pF)
525@15V
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
6
Typical Rise Time (ns)
7.5
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
16.5@10V|18.5@4.5V|24@2.5V|32@1.8V
Mounting
Surface Mount
Package Height
1.5 mm
Package Width
3.9 mm
Package Length
4.9 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing