Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Common Drain Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±8
Maximum Gate Threshold Voltage (V)
1.1
Maximum Continuous Drain Current (A)
7
Maximum Gate-Source Leakage Current (nA)
10000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
20@4.5V
Typical Gate Charge @ Vgs (nC)
10@4.5V
Typical Input Capacitance @ Vds (pF)
1295@10V
Maximum Power Dissipation (mW)
1500
Typical Fall Time (ns)
2240
Typical Rise Time (ns)
328
Typical Turn-Off Delay Time (ns)
3760
Typical Turn-On Delay Time (ns)
280
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
16@4.5V|16.2@4V|17@3.1V|18@2.5V|21@1.8V
Mounting
Surface Mount
Package Height
1
Package Width
4.4
Package Length
3
PCB changed
8
Standard Package Name
SO
Supplier Package
TSSOP
Pin Count
8
Lead Shape
Gull-wing