Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Process Technology
TMOS
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
4.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
50@10V
Typical Gate Charge @ Vgs (nC)
2@4.5V|4.05@10V
Typical Gate Charge @ 10V (nC)
4.05
Typical Input Capacitance @ Vds (pF)
200@15V
Maximum Power Dissipation (mW)
1700
Typical Fall Time (ns)
15.5
Typical Rise Time (ns)
1.5
Typical Turn-Off Delay Time (ns)
18.5
Typical Turn-On Delay Time (ns)
4.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
39@10V|50@4.5V
Mounting
Surface Mount
Package Height
1.5 mm
Package Width
3.9 mm
Package Length
4.9 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing