Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Continuous Drain Current (A)
9.4
Maximum Drain-Source Resistance (mOhm)
14@10V
Typical Gate Charge @ Vgs (nC)
17.9@4.5V
Typical Input Capacitance @ Vds (pF)
1810@10V
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
7.7
Typical Rise Time (ns)
5.9
Typical Turn-Off Delay Time (ns)
44
Typical Turn-On Delay Time (ns)
3.3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
11@10V|12.6@4.5V|16.5@2.5V|23.4@1.8V
Mounting
Surface Mount
Package Height
1.5
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing

