Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
6@N Channel|5@P Channel
Maximum Drain-Source Resistance (mOhm)
30@10V@N Channel|45@10V@P Channel
Typical Gate Charge @ Vgs (nC)
8.9@10V|4.3@4.5V@N Channel|17@10V|7.9@4.5V@P Channel
Typical Gate Charge @ 10V (nC)
8.9@N Channel|17@P Channel
Typical Input Capacitance @ Vds (pF)
516@20V@N Channel|940@20V@P Channel
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
6.6@N Channel|41.2@P Channel
Typical Rise Time (ns)
3.6@N Channel|8.4@P Channel
Typical Turn-Off Delay Time (ns)
16.2@N Channel|44.8@P Channel
Typical Turn-On Delay Time (ns)
6.4@N Channel|6.2@P Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
1.5 mm
Package Width
3.9 mm
Package Length
4.9 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing