IGBT Chip

AIKB30N65DF5ATMA1

Trans IGBT Chip N-CH 650V 55A 188W Automotive AEC-Q100 3-Pin(2+Tab) TO-263 T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  EA

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.6

• Maximum Continuous DC Collector Current (A)

  55

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  188

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Mounting

  Surface Mount

• Package Height

  4.57(Max) mm

• Package Width

  9.45(Max) mm

• Package Length

  10.31(Max) mm

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-263

• Pin Count

  3