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RF FETs

AFV10700HSR5

Trans RF MOSFET N-CH 105V 5-Pin NI-780S T/R

NXP Semiconductors

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  8541.29.00.55

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Channel Mode

  Enhancement

• Channel Type

  N

• Maximum Drain-Source Voltage (V)

  105

• Maximum Gate-Source Voltage (V)

  10

• Maximum Gate Threshold Voltage (V)

  2.3

• Maximum VSWR

  20

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  10

• Typical Reverse Transfer Capacitance @ Vds (pF)

  1.16@50V

• Maximum Power Dissipation (mW)

  526000

• Maximum Output Power (W)

  700(Typ)

• Typical Power Gain (dB)

  19.2

• Maximum Frequency (MHz)

  1215

• Minimum Frequency (MHz)

  960

• Typical Drain Efficiency (%)

  58.5

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.32(Max)

• Package Width

  9.91(Max)

• Package Length

  20.7(Max)

• PCB changed

  5

• Supplier Package

  NI-780S

• Pin Count

  5