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AFT09MS015NT1|NXP|simage
AFT09MS015NT1|NXP|limage
RF FETs

AFT09MS015NT1

Trans RF MOSFET N-CH 40V 3-Pin PLD-1.5W T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    CW
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Gate Threshold Voltage (V)
    2.6
  • Maximum VSWR
    65
  • Maximum Gate-Source Leakage Current (nA)
    600
  • Maximum IDSS (uA)
    10
  • Typical Input Capacitance @ Vds (pF)
    74@12.5V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.04@12.5V
  • Typical Output Capacitance @ Vds (pF)
    34@12.5V
  • Typical Forward Transconductance (S)
    4.4
  • Maximum Power Dissipation (mW)
    125000
  • Maximum Output Power (W)
    16(Typ)
  • Typical Power Gain (dB)
    18.5(Max)
  • Maximum Frequency (MHz)
    941
  • Minimum Frequency (MHz)
    136
  • Typical Drain Efficiency (%)
    77
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.83(Max) mm
  • Package Width
    5.97(Max) mm
  • Package Length
    6.73(Max) mm
  • PCB changed
    3
  • Supplier Package
    PLD-1.5W
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources