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2N7000|ONSEMI|simage
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MOSFETs

2N7000

Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Process Technology
    Power Trench T1
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.2
  • Maximum Gate-Source Leakage Current (nA)
    10
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    5000@10V
  • Typical Input Capacitance @ Vds (pF)
    20@25V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    4@25V
  • Minimum Gate Threshold Voltage (V)
    0.8
  • Typical Output Capacitance (pF)
    11
  • Maximum Power Dissipation (mW)
    400
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1200@10V|1800@4.5V
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.5
  • Typical Gate Plateau Voltage (V)
    4.5
  • Typical Gate Threshold Voltage (V)
    2.1
  • Mounting
    Through Hole
  • Package Height
    4.83
  • Package Width
    3.62
  • Package Length
    4.76
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources