Product Technical Specifications
EU RoHS
Not Compliant
ECCN (US)
EAR99
Part Status
Unconfirmed
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
195@10V
Typical Gate Charge @ Vgs (nC)
28.5(Max)@10V
Typical Gate Charge @ 10V (nC)
28.5(Max)
Maximum Power Dissipation (mW)
25000
Typical Fall Time (ns)
45(Max)
Typical Rise Time (ns)
75(Max)
Typical Turn-Off Delay Time (ns)
40(Max)
Typical Turn-On Delay Time (ns)
30(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Diameter
9.39(Max)
Mounting
Through Hole
Package Height
4.57(Max)
PCB changed
3
Standard Package Name
TO
Supplier Package
TO-39
Pin Count
3
Lead Shape
Through Hole