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2N6661|MICROCHP|simage
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MOSFETs

2N6661

Trans MOSFET N-CH Si 90V 0.35A 3-Pin TO-39 Bag

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    90
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.35
  • Maximum Drain-Source Resistance (mOhm)
    4000@10V
  • Typical Input Capacitance @ Vds (pF)
    50(Max)@24V
  • Maximum Power Dissipation (mW)
    6250
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources