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2N5190G|ONSEMI|limage
2N5190G|ONSEMI|simage
GP BJT

2N5190G

Trans GP BJT NPN 40V 4A 40000mW 3-Pin(3+Tab) TO-225 Box

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    40
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.6@0.15A@1.5A|1.4@1A@4A
  • Maximum DC Collector Current (A)
    4
  • Maximum Collector Cut-Off Current (nA)
    100000
  • Minimum DC Current Gain
    25@1.5A@2V|10@4A@2V
  • Maximum Power Dissipation (mW)
    40000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Box
  • Mounting
    Through Hole
  • Package Height
    10.85
  • Package Width
    2.7
  • Package Length
    7.6
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-225
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources