Bipolar Transistoren General Porpose

TIP31BG

Trans GP BJT NPN 80V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube

onsemi

Produktspezifikationen

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  COMPONENTS

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  80

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  5

• Operating Junction Temperature (°C)

  -65 to 150

• Maximum Base Current (A)

  1

• Maximum Collector-Emitter Saturation Voltage (V)

  1.2@375mA@3A

• Maximum DC Collector Current (A)

  3

• Minimum DC Current Gain

  25@1A@4V|10@3A@4V

• Maximum Power Dissipation (mW)

  2000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  8.9

• Package Width

  4.45

• Package Length

  10.1

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole