STP22NM60N|STMICRO|limage
STP22NM60N|STMICRO|simage
MOSFET

STP22NM60N

Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube

STMicroelectronics
Datenblätter 

Produktspezifikationen
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • SVHC
    Yes
  • SVHC 기준 초과
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    16
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    220@10V
  • Typical Gate Charge @ Vgs (nC)
    44@10V
  • Typical Gate Charge @ 10V (nC)
    44
  • Typical Input Capacitance @ Vds (pF)
    1330@50V
  • Maximum Power Dissipation (mW)
    125000
  • Typical Fall Time (ns)
    38
  • Typical Turn-Off Delay Time (ns)
    74
  • Typical Turn-On Delay Time (ns)
    11
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.15(Max)
  • Package Width
    4.6(Max)
  • Package Length
    10.4(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3
  • Lead Shape
    Through Hole

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen