STN3P6F6|STMICRO|limage
STN3P6F6|STMICRO|simage
MOSFETs

STN3P6F6

Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R

STMicroelectronics
Datenblätter 

Produktspezifikationen
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    160@10V
  • Typical Gate Charge @ Vgs (nC)
    6.4@10V
  • Typical Gate Charge @ 10V (nC)
    6.4
  • Typical Input Capacitance @ Vds (pF)
    340@48V
  • Maximum Power Dissipation (mW)
    2600
  • Typical Fall Time (ns)
    3.7
  • Typical Rise Time (ns)
    5.3
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    6.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.8(Max)
  • Package Width
    3.5
  • Package Length
    6.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    4
  • Lead Shape
    Gull-wing

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen