Produktspezifikationen
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
±25
Maximum Gate Threshold Voltage (V)
5
Maximum Continuous Drain Current (A)
22.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
69@10V
Typical Gate Charge @ Vgs (nC)
110@10V
Typical Gate Charge @ 10V (nC)
110
Typical Input Capacitance @ Vds (pF)
4200@100V
Maximum Power Dissipation (mW)
2800
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.88
Package Width
8
Package Length
8
PCB changed
4
Supplier Package
Power Flat EP
Pin Count
4
Lead Shape
No Lead
Bestellmenge