SI2367DST1GE3|VISHAY|simage
SI2367DST1GE3|VISHAY|limage
MOSFETs

SI2367DS-T1-GE3

Trans MOSFET P-CH 20V 3.8A 3-Pin SOT-23 T/R

Vishay
Datenblätter 

Produktspezifikationen
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    0.18um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    3.8
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    66@4.5V
  • Typical Gate Charge @ Vgs (nC)
    15@8V|9@4.5V
  • Typical Gate to Drain Charge (nC)
    2.5
  • Typical Gate to Source Charge (nC)
    1
  • Typical Reverse Recovery Charge (nC)
    15
  • Typical Input Capacitance @ Vds (pF)
    561@10V
  • Typical Output Capacitance (pF)
    112
  • Maximum Power Dissipation (mW)
    960
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    20
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    100@1.8V|55@4.5V|71@2.5V
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen