Produktspezifikationen
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
COMPONENTS
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
3(Typ)
Operating Junction Temperature (°C)
-55 to 200
Maximum Continuous Drain Current (A)
65
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
69@20V
Typical Gate Charge @ Vgs (nC)
122@20V
Typical Gate to Drain Charge (nC)
35
Typical Gate to Source Charge (nC)
19
Typical Reverse Recovery Charge (nC)
230
Typical Input Capacitance @ Vds (pF)
1900@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
30@400V
Minimum Gate Threshold Voltage (V)
1.8
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
318000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
200
Supplier Temperature Grade
Industrial
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
52@20V
Maximum Positive Gate-Source Voltage (V)
25
Maximum Pulsed Drain Current @ TC=25°C (A)
130
Typical Diode Forward Voltage (V)
3.5
Typical Gate Plateau Voltage (V)
8
Typical Reverse Recovery Time (ns)
55
Typical Gate Threshold Voltage (V)
3
Mounting
Through Hole
Package Height
20
Package Width
5
Package Length
15.6
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
HIP-247
Pin Count
3
Lead Shape
Through Hole