PZT2907AT1G|ONSEMI|limage
PZT2907AT1G|ONSEMI|simage
Bipolar Transistoren General Porpose

PZT2907AT1G

Trans GP BJT PNP 60V 0.6A 1500mW 4-Pin(3+Tab) SOT-223 T/R

onsemi
Datenblätter 

Produktspezifikationen
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single Dual Collector
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    60
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -65 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    1.3@15mA@150mA|2.6@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@15mA@150mA|1.6@50mA@500mA
  • Maximum DC Collector Current (A)
    0.6
  • Maximum Collector Cut-Off Current (nA)
    10
  • Minimum DC Current Gain
    75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
  • Maximum Power Dissipation (mW)
    1500
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.57
  • Package Width
    3.5
  • Package Length
    6.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    4
  • Lead Shape
    Gull-wing

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen