Bipolar Transistoren General Porpose

NSS40301MDR2G

Trans GP BJT NPN 40V 3A 783mW 8-Pin SOIC N T/R

onsemi

Produktspezifikationen

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.21.00.75

• Automotive

  Yes

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Small Signal

• Configuration

  Dual Dual Collector

• Number of Elements per Chip

  2

• Maximum Collector-Base Voltage (V)

  40

• Maximum Collector-Emitter Voltage (V)

  40

• Maximum Base-Emitter Voltage (V)

  6

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Base-Emitter Saturation Voltage (V)

  0.9@0.01A@1A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.115@0.2A@2A|0.115@0.01A@1A|0.06@0.1A@1A|0.011@0.01A@0.1A

• Maximum DC Collector Current (A)

  3

• Maximum Collector Cut-Off Current (nA)

  100

• Minimum DC Current Gain

  180@2A@2V|180@1A@2V|200@500mA@2V|200@10mA@2V

• Maximum Power Dissipation (mW)

  783

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  4(Max)

• Package Length

  5(Max)

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC N

• Pin Count

  8

• Lead Shape

  Gull-wing