Bipolar Transistoren General Porpose

MSD42SWT1G

Trans GP BJT NPN 300V 0.15A 150mW 3-Pin SC-70 T/R

onsemi

Produktspezifikationen

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Small Signal

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  300

• Maximum Collector-Emitter Voltage (V)

  300

• Maximum Base-Emitter Voltage (V)

  6

• Maximum Collector-Emitter Saturation Voltage (V)

  0.5@2mA@200mA

• Maximum DC Collector Current (A)

  0.15

• Minimum DC Current Gain

  25@1mA@10V|40@30mA@10V

• Maximum Power Dissipation (mW)

  150

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.85

• Package Width

  1.24

• Package Length

  2

• PCB changed

  3

• Standard Package Name

  SOT

• Supplier Package

  SC-70

• Pin Count

  3

• Lead Shape

  Gull-wing