MOSFET

MSCSM120HM50CT3AG

SiC MOSFET Power Module

Microchip Technology
Datenblätter 

Produktspezifikationen
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Material
    SiC
  • Maximum Drain-Source Voltage (V)
    1200
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    30
  • Mounting
    Screw
  • Package Height
    12
  • Package Width
    42.5
  • Package Length
    73.4
  • PCB changed
    25
  • Pin Count
    25

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen