Bipolar Transistoren General Porpose

MJE182STU

Trans GP BJT NPN 80V 3A 1500mW 3-Pin TO-126 Tube

onsemi

Produktspezifikationen

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  100

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  7

• Maximum Base-Emitter Saturation Voltage (V)

  1.5@150mA@1.5A|2@600mA@3A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A

• Maximum DC Collector Current (A)

  3

• Minimum DC Current Gain

  50@100mA@1V|30@500mA@1V|12@1.5A@1V

• Maximum Power Dissipation (mW)

  1500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  11.2(Max)

• Package Width

  3.45(Max)

• Package Length

  8.3(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-126

• Pin Count

  3

• Lead Shape

  Through Hole