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KSB546YTU|ONSEMI|simage
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Bipolar Transistoren General Porpose

KSB546YTU

Trans GP BJT PNP 150V 2A 25000mW 3-Pin(3+Tab) TO-220 Tube

onsemi
Datenblätter 

Produktspezifikationen
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Obsolete
  • Código HTS
    8541.29.00.95
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    200
  • Maximum Collector-Emitter Voltage (V)
    150
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@50mA@500mA
  • Maximum DC Collector Current (A)
    2
  • Minimum DC Current Gain
    120@0.4A@10V
  • Maximum Power Dissipation (mW)
    25000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.4(Max)
  • Package Width
    4.7(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220
  • Pin Count
    3
  • Lead Shape
    Through Hole

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Dokumentation und Ressourcen

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