Bipolar Transistoren General Porpose

JANSF2N2222AUA

Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UA

Semicoa Semiconductors

Produktspezifikationen

• RoHS (Unión Europea)

  Not Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active-Unconfirmed

• Código HTS

  EA

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  75

• Maximum Collector-Emitter Voltage (V)

  50

• Maximum Base-Emitter Voltage (V)

  6

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@15mA@150mA|2@50mA@500mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@15mA@150mA|1@50mA@500mA

• Maximum DC Collector Current (A)

  0.8

• Minimum DC Current Gain

  50@0.1@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Mounting

  Surface Mount

• Package Height

  1.9(Max)

• Package Width

  5.71(Max)

• Package Length

  3.93(Max)

• PCB changed

  4

• Supplier Package

  Case UA

• Pin Count

  4