Bipolar Transistoren General Porpose

JANS2N3635UB

Trans GP BJT PNP 140V 1A 500mW 4-Pin Case UB

Semicoa Semiconductors

Produktspezifikationen

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  EA

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  140

• Maximum Collector-Emitter Voltage (V)

  140

• Maximum Base-Emitter Voltage (V)

  5

• Maximum Base-Emitter Saturation Voltage (V)

  0.8@1mA@10mA|0.9@5mA@50mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@1mA@10mA|0.6@5mA@50mA

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Mounting

  Surface Mount

• Package Height

  1.42(Max)

• Package Width

  2.74(Max)

• Package Length

  3.25(Max)

• PCB changed

  4

• Supplier Package

  Case UB

• Pin Count

  4