DRAM

IS42RM32800K-75BLI-TR

DRAM Chip Mobile SDRAM 256Mbit 8Mx32 2.5V 90-Pin TFBGA T/R

Integrated Silicon Solution Inc

Produktspezifikationen

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.24

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile SDRAM

• Chip Density (bit)

  256M

• Organization

  8Mx32

• Number of Internal Banks

  4

• Number of Words per Bank

  2M

• Number of Bits/Word (bit)

  32

• Data Bus Width (bit)

  32

• Maximum Clock Rate (MHz)

  133

• Maximum Access Time (ns)

  8|6

• Address Bus Width (bit)

  14

• Interface Type

  LVCMOS

• Minimum Operating Supply Voltage (V)

  2.3

• Maximum Operating Supply Voltage (V)

  3

• Operating Current (mA)

  120

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  32

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  8

• Package Length

  13

• PCB changed

  90

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  90

• Lead Shape

  Ball