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IPD350N06LGBTMA1|INFINEON|simage
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MOSFETs

IPD350N06LGBTMA1

Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R

Infineon Technologies AG
Datenblätter 

Produktspezifikationen
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    NRND
  • Código HTS
    COMPONENTS
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    29
  • Maximum Drain-Source Resistance (mOhm)
    35@10V
  • Typical Gate Charge @ Vgs (nC)
    10@5V
  • Typical Input Capacitance @ Vds (pF)
    600@30V
  • Maximum Power Dissipation (mW)
    68000
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    21
  • Typical Turn-Off Delay Time (ns)
    29
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    6.22
  • Package Length
    6.5
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
Bestellmenge

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen