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MOSFETs

IPB110P06LMATMA1

Trans MOSFET P-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG
Datenblätter 

Produktspezifikationen
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Drain-Source Resistance (mOhm)
    11@10V
  • Typical Gate Charge @ Vgs (nC)
    281@10V
  • Typical Gate Charge @ 10V (nC)
    281
  • Typical Input Capacitance @ Vds (pF)
    8500@30V
  • Maximum Power Dissipation (mW)
    300000
  • Typical Fall Time (ns)
    74
  • Typical Rise Time (ns)
    33
  • Typical Turn-Off Delay Time (ns)
    277
  • Typical Turn-On Delay Time (ns)
    22
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    9@10V|11@4.5V
  • Mounting
    Surface Mount
  • Package Height
    4.4
  • Package Width
    9.25
  • Package Length
    10
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
Bestellmenge

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen