MOSFETs

IAUCN04S6N013TATMA1

Trans MOSFET N-CH 40V 230A 10-Pin LHDSO EP T/R Automotive AEC-Q101

Infineon Technologies AG

Produktspezifikationen

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  NRND

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quint Drain Quad Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  230

• Maximum Drain-Source Resistance (mOhm)

  1.32@10V

• Typical Gate Charge @ Vgs (nC)

  52@10V

• Typical Gate Charge @ 10V (nC)

  52

• Typical Input Capacitance @ Vds (pF)

  3700@25V

• Maximum Power Dissipation (mW)

  133000

• Typical Fall Time (ns)

  8

• Typical Rise Time (ns)

  4

• Typical Turn-Off Delay Time (ns)

  17

• Typical Turn-On Delay Time (ns)

  7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Mounting

  Surface Mount

• Package Height

  1.35

• Package Width

  5.48

• Package Length

  5.15

• PCB changed

  10

• Supplier Package

  LHDSO EP

• Pin Count

  10