CSD25310Q2|TI|limage
CSD25310Q2|TI|simage
MOSFET

CSD25310Q2

Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R

Texas Instruments

Produktspezifikationen
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1.1
  • Maximum Continuous Drain Current (A)
    20
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    23.9@4.5V
  • Typical Gate Charge @ Vgs (nC)
    3.6@4.5V
  • Typical Gate to Drain Charge (nC)
    0.5
  • Typical Input Capacitance @ Vds (pF)
    504@10V
  • Maximum Power Dissipation (mW)
    2900
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    15
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    0.85
  • Mounting
    Surface Mount
  • Package Height
    0.75
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SON
  • Supplier Package
    WSON EP
  • Pin Count
    6
  • Lead Shape
    No Lead

Dokumentation und Ressourcen

Datenblätter
Design-Ressourcen