MOSFETs
BSS138WH6327XTSA1
Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101
Infineon Technologies AGProduktspezifikationen
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
Yes
PPAP
Unknown
Category
Small Signal
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.28
Maximum Gate-Source Leakage Current (nA)
10
Maximum IDSS (uA)
0.1
Maximum Drain-Source Resistance (mOhm)
3500@10V
Typical Gate Charge @ Vgs (nC)
1@10V
Typical Gate Charge @ 10V (nC)
1
Typical Gate to Drain Charge (nC)
0.3
Typical Gate to Source Charge (nC)
0.1
Typical Reverse Recovery Charge (nC)
3.3
Typical Input Capacitance @ Vds (pF)
32@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
2.8@25V
Minimum Gate Threshold Voltage (V)
0.6
Typical Output Capacitance (pF)
7.2
Maximum Power Dissipation (mW)
500
Typical Fall Time (ns)
8.2
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
6.7
Typical Turn-On Delay Time (ns)
2.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2100@10V|3000@4.5V|3200@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
1.12
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
250
Typical Diode Forward Voltage (V)
0.85
Typical Gate Plateau Voltage (V)
3.2
Typical Reverse Recovery Time (ns)
8.3
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
1
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-323
Pin Count
3
Lead Shape
Gull-wing
Bestellmenge