Bipolar Transistoren General Porpose

2N2880

Trans GP BJT NPN 80V 5A 2000mW 3-Pin TO-59 Tray

Microchip Technology

Produktspezifikationen

• EU RoHS

  Not Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  110

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  8

• Maximum Base-Emitter Saturation Voltage (V)

  1.2@0.1A@1A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.25@0.1A@1A|1.5@0.5A@5A

• Maximum DC Collector Current (A)

  5

• Minimum DC Current Gain

  40@50mA@5V|40@1A@2V|15@5A@5V

• Maximum Power Dissipation (mW)

  2000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Tray

• Mounting

  Stud

• Package Height

  23.44(Max)

• Package Width

  11.1(Max)

• Package Length

  12.81(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-59

• Pin Count

  3

• Lead Shape

  Terminal Stud