BSB014N04LX3GXUMA1|INFINEON|limage
BSB014N04LX3GXUMA1|INFINEON|simage
MOSFET

BSB014N04LX3GXUMA1

Trans MOSFET N-CH 40V 36A 5-Pin WDSON T/R

Infineon Technologies AG
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • 미국 세관 상품 코드
    BSB014N04LX3GXUMA1
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    36
  • Maximum Drain-Source Resistance (mOhm)
    1.4@10V
  • Typical Gate Charge @ Vgs (nC)
    71@4.5V|148@10V
  • Typical Gate Charge @ 10V (nC)
    148
  • Typical Input Capacitance @ Vds (pF)
    12700@20V
  • Maximum Power Dissipation (mW)
    2800
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    8.4
  • Typical Turn-Off Delay Time (ns)
    60
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1.2@10V|1.6@4.5V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    400
  • Mounting
    Surface Mount
  • Package Height
    0.52
  • Package Width
    4.93
  • Package Length
    5.5
  • PCB changed
    5
  • Standard Package Name
    SON
  • Supplier Package
    WDSON
  • Pin Count
    5
  • Lead Shape
    No Lead

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