MOSFETs

TSM60NE084CIT C0G

Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) ITO-220TL

Taiwan Semiconductor

产品技术规范

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  ±30

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  21

• Maximum Drain-Source Resistance (mOhm)

  82@12V

• Typical Gate Charge @ Vgs (nC)

  69@10V

• Typical Gate Charge @ 10V (nC)

  69

• Typical Input Capacitance @ Vds (pF)

  2930@300V

• Maximum Power Dissipation (mW)

  83000

• Typical Fall Time (ns)

  3.6

• Typical Rise Time (ns)

  50

• Typical Turn-Off Delay Time (ns)

  60

• Typical Turn-On Delay Time (ns)

  33

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  15.3(Max)

• Package Width

  4.7(Max)

• Package Length

  10.3(Max)

• PCB changed

  3

• Tab

  Tab

• Supplier Package

  ITO-220TL

• Pin Count

  3