产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.1
Maximum Continuous Drain Current (A)
393
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
0.65@10V
Typical Gate Charge @ Vgs (nC)
52@4.5V|110@10V
Typical Gate Charge @ 10V (nC)
110
Typical Input Capacitance @ Vds (pF)
7700@15V
Maximum Power Dissipation (mW)
3000
Typical Fall Time (ns)
10
Typical Rise Time (ns)
12
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Surface Mount
Package Height
0.95
Package Width
5
Package Length
5
PCB changed
8
Standard Package Name
SO
Supplier Package
SOP Advance
Pin Count
8
订单数量