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TPH4R50ANHL1Q|TOSHIBA|simage
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MOSFETs

TPH4R50ANH,L1Q

Trans MOSFET N-CH Si 100V 93A 8-Pin SOP Advance T/R

Toshiba
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    93
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    4.5@10V
  • Typical Gate Charge @ Vgs (nC)
    58@10V
  • Typical Gate Charge @ 10V (nC)
    58
  • Typical Input Capacitance @ Vds (pF)
    4000@50V
  • Maximum Power Dissipation (mW)
    2800
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    9.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.95
  • Package Width
    5
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOP Advance
  • Pin Count
    8

文档和资源

数据表
设计资源