MOSFETs

TPH4R50ANH,L1Q

Trans MOSFET N-CH Si 100V 93A 8-Pin SOP Advance T/R

Toshiba

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Maximum Continuous Drain Current (A)

  93

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  4.5@10V

• Typical Gate Charge @ Vgs (nC)

  58@10V

• Typical Gate Charge @ 10V (nC)

  58

• Typical Input Capacitance @ Vds (pF)

  4000@50V

• Maximum Power Dissipation (mW)

  2800

• Typical Fall Time (ns)

  13

• Typical Rise Time (ns)

  9.6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.95

• Package Width

  5

• Package Length

  5

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOP Advance

• Pin Count

  8